Investigation of Sputtered AlN Nucleation Layer on GaN-based Light Emitting Diodes
碩士 === 國立交通大學 === 照明與能源光電研究所 === 100 === The purpose of this study was to investigate the application of sputtered AlN nucleation layers in GaN-based light-emitting diodes (LEDs). We first investigated the growth mechanism and surface morphology of GaN film growth on varying thicknesses of sputt...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/71451638416243143225 |