A Study on the Characterization of High-κ Materials and their Applications to Poly-Si Nanowire Nonvolatile Memory Devices
碩士 === 國立交通大學 === 電子研究所 === 100 === In this thesis, we have investigated the basic characteristics of two high-κ materials (i.e., HfO2 and Al2O3) with MOS capacitors. The effects of post-deposition-annealing (PDA) temperature on the properties of the dielectrics are studied. For Al2O3, a higher temp...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92188353470275903416 |