The Investigation of Charge-Trapping Flash Nonvolatile Memory by Using Ge Diffusion into Si3N4 Trapping Layer
碩士 === 國立交通大學 === 電子研究所 === 100 === The rapid advancement of technology with a wide range of consumer electronics is popularity. In recent years, the requirements for memory are increasing and a variety of memory will be invented. Non-volatile flash memory are popular because of its high density,...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73374988888532153086 |