Environmental Sensitivity and Reliability for Amorphous Metal-Oxide Thin Film Transistors
博士 === 國立交通大學 === 電子研究所 === 100 === Recently, higher electron mobility is needed for thin film transistors (TFTs) to twist the liquid crystal in large-size displays. However, the electron mobility of conventional amorphous-silicon (α-Si:H) TFTs is very low (< 1 cm2 / Vs). As a result, amorpho...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64312763191912483805 |