Investigating the resistance Switching Mechanism in Silicon Oxide Based Thin Film for Non-Volatile Resistance Switching Memory
碩士 === 國立交通大學 === 電子研究所 === 100 === The resistive switching random access memories (RRAMs) possess some advantages of scalability, low power consumption, fast operating speed and stable endurance. The RRAM with these advantages has high potential for next generation memory applications. We use silic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51917058435088547243 |