Numerical Simulation of High-k/Metal Gate Floating Gate Flash Memory Characteristics and Device Scaling
碩士 === 國立交通大學 === 電子研究所 === 100 === In this dissertation a simulation method to simulate the transient behavior of programming and erasing in high-k/metal gate planar floating gate flash memory is developed. We also simulate the electric field distribution under different channel length by ISE T...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68581600306689963594 |