Impacts of Channel's Cross-Sectional Shape on the Operation of Poly-Si Nanowire Nonvolatile Memory Devices
碩士 === 國立交通大學 === 電子研究所 === 100 === In this thesis, we have employed simple and flexible methods that were recently developed by our group to fabricate NW devices. By modifying some major steps of fabrication procedure, GAA NW SONOS devices with two different shapes but comparable feature size o...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66753300178601857050 |