Development of GaN Substrates and Homoepitaxy
博士 === 國立交通大學 === 電子物理系所 === 100 === Currently, III-nitride devices are almost grown on sapphire substrates owing to their reliability and cost. However, their performance is limited due to the heteroepitaxy which accompanies various issues, such as lattice mismatch, the difference of thermal ex...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92125023348935499391 |