Testkey of tsmc 0.25 um high voltage process in high frequency

碩士 === 國立交通大學 === 電子物理系所 === 100 === In recent years, the rise of high-power integrated circuits has good application. The LDMOS has high breakdown voltage with a planar structure , which become the major drive components. The LDMOS unique low-doped regions can scatter electric field, it’s the reaso...

Full description

Bibliographic Details
Main Authors: Jen, Hsin-Tung, 任欣桐
Other Authors: Chen, J. F.
Format: Others
Language:en_US
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/74396290519534079430