Influences of ceiling and substrate temperatures on growth of InGaN films using two-heater MOCVD reactor
碩士 === 國立交通大學 === 電子物理系所 === 100 === In this thesis, we study the ceiling and substrate temperatures on growth of InGaN films using the two-heater MOCVD reactor. The structural and optical properties were investigated by X-ray diffraction and Photo- luminescence(PL) measurements. In the series of sa...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73375661208237467319 |