Effects of Random Interface Traps and Trapping/De-Trapping on Electrical Characteristics of 16 nm High-k/Metal Gate MOSFETs
碩士 === 國立交通大學 === 電信工程研究所 === 100 === High-κ/metal gate technology has been recently recognized as the key to sub-45-nanometer transistor fabrication because of the improvement of device performance and reduction of intrinsic parameter fluctuation. However, the use of high-κ/metal gate device in...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77703739284015033632 |