Gate Drive Circuits Design and Implement for AlGaN/GaN HEMT Power Transistors
碩士 === 國立交通大學 === 機械工程學系 === 100 === This thesis proposed a proper and complete high/low side gate drive circuit for GaN transistors. Unlike the conventional enhancement mode driver, this circuit designed for the depletion mode transistors, providing a negative gate-source voltage to turn off the po...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56931317049935385710 |