Study of Nanoindentation and Nanoscratch Behavior for Annealing Strained-SiGe Thin Films

博士 === 國立交通大學 === 機械工程學系 === 100 === Silicon-germanium (SiGe) material has recently become the most attractive semiconductor thin film in HBT (Heterojunction Bipolar Transistor) and CMOS(Completed Metal Oxide Semiconductor) because of its outstanding behavior. Nevertheless, due to the lattice mismat...

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Bibliographic Details
Main Authors: Lin, Tien-Yu, 林天佑
Other Authors: Chou, Chang-Pin
Format: Others
Language:en_US
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/65698531623940688085