High Performance Amorphous In-Ga-Zn-O Thin Film Transistor with Si Capping Layer
碩士 === 國立交通大學 === 光電工程學系 === 100 === With a high mobility (>10 cm2/Vs) than conventional amorphous silicon semiconductor and a low operating voltage (< 5 V) and small sub-threshold voltage swing, amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) draw a lot of attentions. Besides, due to...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15813482316844577859 |