Reduction of efficiency droop behavior in InGaN-based light-emitting diodes by improving hole transport
碩士 === 國立交通大學 === 光電工程學系 === 100 === In this thesis, we designed the epitaxial structure of InGaN light-emitting diodes (LEDs) to improve the holes transport, which could alleviate the efficiency droop behavior. We first designed a graded-composition quantum barrier (GQB) for c-plane InGaN/GaN LEDs....
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15496150556069311204 |