Investigation and comparison of the characteristics for InGaN-based light-emitting diodes grown on GaN substrate and sapphire-based substrates.
碩士 === 國立交通大學 === 光電工程學系 === 100 === In this thesis, the high performance InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were grown on a homoepitaxial GaN substrate by using metal-organic chemical vapor deposition (MOCVD). The same LED structures were also grown on sapphire sub...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71891515853262385033 |