Fabrication of AlGaN/GaN HEMTs with Slant Field Plates Using Deep-UV Lithography
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 100 === AlGaN/GaN HEMTs have been widely investigated and demonstrated for their capabilities on high-frequency power applications. In order to improve the breakdown voltage of the device, field plate structure is generally used in GaN power HEMTs. Through a wel...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71747278213639841370 |