Study of GaN epilayer quality improvement using defect selective passivation technique
碩士 === 國立交通大學 === 影像與生醫光電研究所 === 100 === In recent decades, the III-nitrides become an interesting class of wide band-gap materials and play an important role in semiconductor devices. GaN-based light emitting devices have attracted great attention in last decade due to its importance in solid state...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21503166390545428269 |