Quantum Effects on Charge Transport Properties of Si and Ge Nanostructured Transistors
博士 === 國立中央大學 === 電機工程研究所 === 100 === In this thesis, fabrication and characterization of both Si and Ge nanostructures (nanowire (NW) and quantum dot (QD)) as well as the associated transistors were investigated. Si NWs of various width ranging from 7 to 60 nm were generated using a combination of...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59581253813618432856 |