Fabrication of recessed enhancement-mode AlGaN/GaN power MOSFETs
碩士 === 國立中央大學 === 電機工程研究所 === 100 === Enhancement mode AlGaN/GaN MOSFETs fabricated by gate recessed technique and MIS structure is mentioned in this study. ICP dry etch the gate recessed area with BCl3/Cl2/Ar/O2 (19/50/5/6 sccm) gas can effective reduce the etching rate and surface roughness. Furth...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67170045277823460914 |