Research of High Efficiency Silicon Heterojunction Solar Cell Fabricated by Sputtering:Impact of Silicon Thin Film Properties on Device Performance

• Main Authors: Hsuan-Wen Wang, 王宣文
• Other Authors: Cheng-Chung Lee
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/58384568194537662124

博士 === 國立中央大學 === 光電科學研究所 === 100 === Sputtering is a popular technique with many advantages for thin film deposition. However, as for the preparation of hydrogenated silicon thin film, ion bombardment accompanies during sputtering may generate microstructures (voids, columnar structures) within the film, which leads to unfavorable silicon dihydride bodings and electrical defects. Therefore, hydrogenated silicon films fabricated by sputtering are hard to be doped. Those inferior properties made sputtering become non-popular in the fabrication of silicon thin film cells. In this research, we improved the qualities of hydrogenated silicon thin films and investigated electrical and optical properties with respect to deposition parameters. Our results indicated that applying positive bias voltage on the substrate provokes silicon monohydride formation, which is a rather stable bonding configuration as compared to silicon dihydride. Besides, the difficulties of doping can be reduced by refining fabrication parameters such as sputtering power and gas pressure. Futhermore, amorphous P-type / crystalline N-type silicon heterojunction solar cell using non-texture wafer surface has also been demonstrated. Proto-type solar cells with 1cm × 1cm area and 10% conversion efficiency were realized by choosing the appropriate sputtering parameters.