The Performance of Multi-Charge Traping Layer to Nonvolatile Memory Device
碩士 === 國立彰化師範大學 === 電機工程學系 === 100 === Traditional silicon nitride charge storage layer of floating gate flash memory in the miniature components of the development has been limited. However, SONOS flash memory is proposed and it’s not only faster, but more importantly, a component can store two bit...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43900339099184404949 |