The study on fabrication and characteristics of top gate Indium Zinc Oxide Field Effect Transistor
碩士 === 國立彰化師範大學 === 光電科技研究所 === 100 === In the experiment, we used the sol-gel process to make a Top-Gate Top-Contact structure of the thin film transistor to use literature used nitric acid indium + zinc acetate InZnO system. Then this experiment for nitrate indium + zinc acetate, indium chloride +...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11412599440614451749 |