Investigation of GaN Device with Gamma-shape Gate
碩士 === 國立東華大學 === 材料科學與工程學系 === 100 === This research is mainly investigated on fabricating a HfO2-passivted Γ-gated AlGaN/GaN high electron mobility transistors (HEMT). This process can achieve gate length reduction, HfO2 surface passivation, and a field plate structure at the same time. Co...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/gpd86s |