Electrical and thermal transport properties of Ge substituted SrSi2

碩士 === 國立東華大學 === 物理學系 === 100 === The effects of Ge partial substitution at Si site of the narrow gap semiconductor SrSi2 were investigated by means of thermal and electrical transport measurements. Electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (K) measurements were...

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Bibliographic Details
Main Authors: Hong-Yi Liao, 廖紘毅
Other Authors: Yung- Kang Kuo
Format: Others
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/44zdgm