The Electrical Property and Preparation of High- Dielectric Materials by RF Sputtering
碩士 === 南榮技術學院 === 工程科技研究所碩士班 === 100 === This study using radio frequency sputtering (RF magnetron sputtering), in the fixation reaction chamber pressure 1m Torr or a growth temperature of 25℃, the three kinds of high dielectric material, HfO2、TiO2、Ta2O5, respectively, the sputtering in the film The...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45499632099136845273 |