The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 100 === The operating characteristics of non-volatile memory for modern requirement are high-density , low power consumption, fast read and write speed, and good reliability. The floating gate memory generated leakage path in the tunnel oxide during the trend of sc...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98340345493730944245 |