| Summary: | 碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 100 === The operating characteristics of non-volatile memory for modern
requirement are high-density , low power consumption, fast read and
write speed, and good reliability.
The floating gate memory generated leakage path in the tunnel oxide
during the trend of scaling down, which will result in the loss of all stored
charge to the silicon substrate.
As the data retention time and endurance are taken into consideration,
the thickness of tunnel oxide exist a physical limit, owing to the demand
of high-density capacities.
RRAM is offered as an option in the next generation non-volatile
memories, due to the following advantages:
(1) simple structure and easy to process, and low cost ; (2) less
restrictive in the scaling-down process; (3) with the multi-bit data storage
features; (4) high speed operation; (5) Repeat write and read is more than
one million.
In the thesis, we use a simple and low-temperature process to form the
silicon germanium oxide (Si-Ge-O) RRAM and silicon germanium oxide
RRAM with nitrogen doping between the electrode and
silicon-germanium oxide interface.
By sputtering at argon and oxygen (Ar/O2), and sputtering at argon and
ammonia (Ar/NH3) with silicon-germanium target to form silicon
germanium oxide RRAM and silicon germanium oxide (Si-Ge-O)/silicon
germanium oxnitride (Si-Ge-O-N) RRAM. By informing a SiGeON layer
between the interface of electrode and silicon-germanium oxide improve
the stability of write voltage and endurance reliability.
In addition, both silicon and germanium are useful as materials in the
optoelectronics industry and extensively studied in material science.
Based on the two materials, the smiting characterizations of RRAM
will be improved in the read-write stability and operation reliability.
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