Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures
碩士 === 國立中山大學 === 物理學系研究所 === 100 === The higher mobility is needed for thin film transistor (TFT) mainly used to be applied in the larger size flat-panel displays (FPDs). The amorphous metal oxide TFT has mobility higher than 10 cm2/V‧s and can substitute the poor mobility (<1 cm2/V‧s) of tradi...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86011901216619964761 |