Study of Resistance Switching Physical Mechanism inHafnium Oxide Thin Film for Resistive Random Access Memory
碩士 === 國立中山大學 === 物理學系研究所 === 100 === This study is focuses on the resistance switching physical mechanism in hafnium oxide (HfO2) of resistive random access memory (RRAM). HfO2 was taken as the resistance switching layer because HfO2 is extremely compatible with the prevalent complementary metal ox...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14843269444005708072 |