Surface Incident Metal-Semiconductor-Metal Ge Photodetectors on Si Substrate Fabricated by Rapid-Melting-Growth Method
碩士 === 國立清華大學 === 光電工程研究所 === 100 === Over decades, silicon semiconductor industry grows rapidly due to advanced CMOS technology as well as relatively low cost for silicon and stable material properties. Silicon-based optoelectronics, benefited from the matured IC industry, receives a lot of attenti...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14675352589340958796 |