Photoemission studies on the electronic properties of group-III nitride heterojunctions
博士 === 國立清華大學 === 物理學系 === 100 === Group-III nitride (InN, GaN, AlN, and their alloys) heterostructures are promising materials for device applications in optoelectronics and electronics. For accurate design of III-nitride devices, detailed knowledge of their intrinsic electronic properties is impor...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24535119148685690151 |