Research on the plasmonic and photoluminescent properties of metal-oxide-semiconductor structures
博士 === 國立清華大學 === 物理學系 === 100 === InGaN alloy systems are promising materials for device applications in optoelectronics. For an accurate design of III-nitride devices, a proper knowledge of their optical properties is important. However, the natural crystalline form of group-III nitrides, the wurt...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31923136998475751584 |