分子束磊晶成長之 Type-II 銻化鎵/砷化鎵奈米結構及其在發光元件的應用結構及其在發光元件的應用
博士 === 國立清華大學 === 電子工程研究所 === 100 === In this thesis, the critical thickness of GaSb QDs is determined to be ~ 2.5 ML by RHEED patterns and AFM measurements. The formation of GaSb QDs under different V/III ratios is investigated. The growth mode of the GaSb QDs would gradually change from IMF mode...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24408349626243221252 |