Hot-carrier Induced Reliability Degradation in High Voltage P-LDMOS Transistors
碩士 === 國立清華大學 === 電子工程研究所 === 100 === In this thesis, the p-type lateral diffused MOS (LDMOS) transistor used in this work is implemented with a 0.5 μm 2p3m high-voltage process. To investigate the reliability issue, charge pumping method is used to detect the interface states of the device. And...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44883155072548759819 |