Development of High-Voltage 4H-SiC Vertical Diodes
碩士 === 國立清華大學 === 電子工程研究所 === 100 === Abstract This thesis investigated the design and the fabrication of high-voltage 4H-SiC vertical diodes, including PiN diodes and Ti-TJBSs (Titanium Trench Junction Barrier Schottky Diode). Conventional PiN diode is fabricated on epitaxial wafers. Its forward vo...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68106811371972384530 |