Design and Fabrication of High Power GaN-Based HEMTs and Schottky Barrier Diodes on Silicon Substrates
碩士 === 國立清華大學 === 電子工程研究所 === 100 === Gallium Nitride has generated significant interests for high-voltage applications due to its superior material properties such as wide bandgap, high critical electric field, high electron saturation velocity, and good thermal stability. These properties offer se...
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| Format: | Others |
| Language: | en_US |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49083368535779530807 |