Characterizations of GaN epilayers on nanoscale patterned c-plane sapphire substrates for LEDs
博士 === 國立清華大學 === 奈米工程與微系統研究所 === 100 === Recently, GaN-based wide bandgap semiconductors are very important material system for fabrication of light emitting devices (LEDs) in a wide range of wavelength. The GaN-based laser diodes (LDs) and LEDs have been widely used in many areas, such as optical...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87083841548921967812 |