Studies of GaN thin films and InGaN/GaN quantum wells on Si substrates with AlN buffer layers
碩士 === 國立臺南大學 === 材料科學系碩士班 === 100 === We use micro-Raman spectra, scanning electron microscope, atomic force microscope, and photoluminescence spectra to study the properties of III-V nitride semiconductor materials grown on (111) Si substrates with different growth conditions of AlN buffer layers....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80232853635099693506 |