Studies of GaN thin films and InGaN/GaN quantum wells on Si substrates with AlN buffer layers
碩士 === 國立臺南大學 === 材料科學系碩士班 === 100 === We use micro-Raman spectra, scanning electron microscope, atomic force microscope, and photoluminescence spectra to study the properties of III-V nitride semiconductor materials grown on (111) Si substrates with different growth conditions of AlN buffer layers....
Main Authors: | Wei-shiang Su, 蘇暐翔 |
---|---|
Other Authors: | none |
Format: | Others |
Language: | zh-TW |
Published: |
2012
|
Online Access: | http://ndltd.ncl.edu.tw/handle/80232853635099693506 |
Similar Items
-
Investigations of the luminescence of GaN and InGaN/GaN quantum wells
by: PecharromaÌn-Gallego, RauÌl
Published: (2004) -
Analysis of the InGaN ∕ GaN LED With an InGaN ∕ GaN pre-buffer layer
by: Po-Yi Hou, et al.
Published: (2008) -
InGaN/GaN Quantum Well Waveguide Study
by: Tsu-Chien Chen, et al.
Published: (2002) -
Photoluminescence studies of InGaN/GaN mulitiple-quantum-well LEDs
by: Tai-Shiang Chen, et al.
Published: (2004) -
GaN Based Solar Cell and Light Emitting Diode with Hybrid AlGaN/InGaN and GaN/InGaN Multiple Quantum Wells
by: Bing-HungHsieh, et al.
Published: (2015)