Analysis of strain in GaN and SiC films by Raman-scattering spectroscopy
碩士 === 國立臺灣師範大學 === 物理學系 === 100 === We present Raman-scattering studies of structural phases in GaN and 3C-SiC films. Cross-sectional Raman spectra are also used to detect the depth dependence of residual strain in both films. First, the Raman spectrum of 7.6 micrometre-thick GaN film shows two pho...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12394676326439502290 |