Simulations and experimental validations of nanoscale electronic devices using advanced strained engineering
碩士 === 國立臺灣師範大學 === 機電科技研究所 === 100 === In this study, the effect of layout of the n-type metal-oxide field-effect transistors (nMOSFET) on the stress distribution and performance of devices was analyzed. The nMOSFET is mainly composed of silicon–carbon (SiC) stressors embedded in the source and dra...
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| Format: | Others |
| Language: | zh-TW |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31926901570041200289 |