Oxidational Characteristics and Mechanical Properties of Nitrogen-doped Fluorinated Diamond-Like Carbon Coated Si Substrate by RF-Plasma Enhanced Chemical Vapor Deposition

• Main Authors: Chiuan-Yi, Liu, 劉權毅
• Other Authors: Chou, Chau-Chang
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/38383354137194354726

碩士 === 國立臺灣海洋大學 === 機械與機電工程學系 === 100 === Nitrogen doped fluoride diamond-like carbon (FN-DLC) films were deposited on p-type(100) silicon substrates by radio frequency plasma enhanced chemical vapor deposition(rf PECVD) technique using mixture of methane(CH4)，tetrafluoromethane(CF4)，and nitrogen(N2) gases. According to the preliminary observations, silicon surface not conducive to these films’ adhesion. In this research, we use CF4 and H2 mixture to conduct the pretreatment, the plasma etching at the silicon surface inducing defects, and employ CH4 and H2 of mixture to coat diamond-like carbon (DLC) film as interlayer in advance to increase the adhesion property. DLC’s thickness is about 30 nm. Then the CH4-CF4-N2 gases coated nitrogen doped fluoride diamond like carbon film’s and deposited. Film thickness observed by scanning electron microscope. The structure and surface properties were analyzed by Raman spectroscopy, water contact angle measurement, atomic force microscopy, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. The mechanical properties were texted by nano-indentation and nano-scratch. Annealing experiments were conducted to survey the film’s oxidation resistance. According on the above results, the nitrogen incorporation of the film’s reduces hydrophilicity and film’s deposition rate. Film’s built by N2-rich mixture have better anti-oxidation characteristic by the comparison of the phases before after annealing tests. Film’s built by CF4-rich mixture possess soft but more ductile behavior. However, the hardness of those built by N2-rich mixture cannot be verified from the substrate’s due to their limiter thickness. But for thin film built by CH4-CF4-N2 gas flow rate in 5-5-30 sccm, can be indentified it’s better adhesion when the thickness of the films is under consideration.