Photovoltaic Physics of InGaN/GaN Multiple Quantum Wells
碩士 === 國立臺灣大學 === 光電工程學研究所 === 100 === Indium gallium nitride (InGaN) is a promising material for photovoltaic devices due to it potential to realize nearly full absorption of solar spectrum. A challenge for InGaN-based solar cells is the deteriorated crystal qualities at high indium (In) conten...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81041904932229274104 |