Fabrication and analysis of 4H-SiC MOS Capacitor with High-k Gate Dielectrics:ZrO2,Y2O3
碩士 === 國立臺灣大學 === 工程科學及海洋工程學研究所 === 100 === In this research, we design two kinds of MOS-Capacitors with ZrO2 and Y2O3 as the insulators. (Equivalent Oxide Thickness, EOT) EOT is 10nm.Therefore, ZrO2 and Y2O3 were deposited on substrates at different substrate temperature (room temperature and 200℃)...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93026411743096604858 |