Study on the Structure and Process of MOS Photo and Temperature Sensitive Devices
博士 === 國立臺灣大學 === 電子工程學研究所 === 100 === In this work, we will focus on the characteristics of inversion tunneling currents for ultra-thin oxide prepared by low temperature process and the MOS structure applications, including photo device and temperature sensor. We will discuss the interesting appl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57204415851936442416 |