Study on the Structure and Process of MOS Photo and Temperature Sensitive Devices
博士 === 國立臺灣大學 === 電子工程學研究所 === 100 === In this work, we will focus on the characteristics of inversion tunneling currents for ultra-thin oxide prepared by low temperature process and the MOS structure applications, including photo device and temperature sensor. We will discuss the interesting appl...
Main Authors: | Chih-Yao Wang, 王志耀 |
---|---|
Other Authors: | Jenn-Gwo Hwu |
Format: | Others |
Language: | en_US |
Published: |
2012
|
Online Access: | http://ndltd.ncl.edu.tw/handle/57204415851936442416 |
Similar Items
-
A study on the characteristics of InP MOS structure prepared by photo-CVD
by: HUANG, ZHI-REN, et al.
Published: (1988) -
A study on the characteristics of InSb MOS structure prepared by photo-CVD
by: LYU,RUI-LIN, et al.
Published: (1990) -
Electric properties of BST/nitride stack structure on MOS device
by: 林志宏
Published: (2000) -
Modeling velocity overshoot for deep-submicron VLSI MOS devices
by: Chang,Yao-wen, et al.
Published: (1996) -
Photosensing Characteristic of MOS Devices in Inversion Region and Enhancement of Sensitivity
by: Chang-Tai Yang, et al.
Published: (2016)