Characterization, Modeling and Application of Deep Depletion from MOS Capacitors with Ultrathin Oxides
博士 === 國立臺灣大學 === 電子工程學研究所 === 100 === In this work, a comprehensive study on tunneling induced deep depletion (DD) behavior with ultra-thin oxide (2.0 to 2.8nm) of MOSCAPs was investigated from C-V curves experimentally. With comparing the C-V and J-V diagrams simultaneously, it was found that the...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2012
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Online Access: | http://ndltd.ncl.edu.tw/handle/13212065095167748604 |