Characterization, Modeling and Application of Deep Depletion from MOS Capacitors with Ultrathin Oxides
博士 === 國立臺灣大學 === 電子工程學研究所 === 100 === In this work, a comprehensive study on tunneling induced deep depletion (DD) behavior with ultra-thin oxide (2.0 to 2.8nm) of MOSCAPs was investigated from C-V curves experimentally. With comparing the C-V and J-V diagrams simultaneously, it was found that the...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/13212065095167748604 |