Study on the InAs-based materials and devices grown by a molecular beam epitaxy system
博士 === 國立臺灣大學 === 電子工程學研究所 === 100 === We determined the unstrained conduction band and valence band edge energies of InAs1-xSbx (0.05 < x < 0.13) by fitting the photoluminescence (PL) peak energy of InAsSb/InAs0.67P0.23Sb0.10 multiple quantum wells (QWs) that was measured in the temperature r...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/55026544659288494691 |