Study of structural properties and characterization of (100) and (111) GaAsSb/GaAs grown by molecular beam epitaxy
博士 === 國立臺灣大學 === 電子工程學研究所 === 100 === In this dissertation, GaAsSb epilayers are grown on (100) and (111)B GaAs substrates with different growth temperature using gas source molecular beam epitaxy (GSMBE). Orientation-dependent phase separation and structural properties of grown samples were studie...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43513624716401763455 |